Papers - TERAI Yoshikazu
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Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed
Terai Y., Noda K., Hashimoto S., Fujiwara Y.
Journal of Physics: Conference Series 165 2009.07
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Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature Reviewed
31 ( 9 ) 1323 - 1326 2009.07
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Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection Reviewed
2 ( 7 ) 2009.07
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Modifications of direct transition energies in Β -FeSi2 epitaxial films grown by molecular beam epitaxy Reviewed
94 ( 24 ) 2009.06
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Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed
93 ( 23 ) 2008.12
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Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe) 3O 4 on a GaAs(001) substrate using a MgO buffer layer Reviewed
Kanki T., Kawahara T., Asakawa N., Hotta Y., Terai Y., Fujiwara Y., Tabata H., Kawai T.
Materials Research Society Symposium Proceedings 1034 86 - 90 2008.12
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Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy Reviewed
5 ( 9 ) 2864 - 2866 2008.12
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Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping Reviewed
5 ( 9 ) 3159 - 3161 2008.12
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Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering Reviewed
5 ( 9 ) 3125 - 3127 2008.12
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GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy Reviewed
5 ( 9 ) 2716 - 2718 2008.12
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Site preference of atoms in heusler alloys Fe<inf>3</inf>Si and Fe <inf>2</inf>MnSi grown on ge(111) toward realization of Ge channel spin transistors Reviewed
1119 13 - 18 2008.12
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Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy Reviewed
5 ( 9 ) 2861 - 2863 2008.12
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Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane Reviewed
517 ( 2 ) 479 - 482 2008.11
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Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy Reviewed
92 ( 11 ) 2008.03
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Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium Reviewed
106 ( 1 ) 2008.03
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Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength Reviewed
205 ( 1 ) 64 - 67 2008.01
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Ultrafast carrier trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique Reviewed
401-402 234 - 237 2007.12
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Simulation of light propagation on photonic crystals with conjugated inversion lattices Reviewed
KUNIMATSU Shunsuke, TERAI Yoshikazu, MAEDA Yoshihito
IEICE technical report 107 ( 388 ) 39 - 42 2007.12
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Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements Reviewed
Shimada K., Terai Y., Takemoto S., Suzuki M., Tonouchi M., Fujiwara Y.
IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics 486 - 487 2007.12
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Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique Reviewed
Fujiwara Y., Nakamura K., Takemoto S., Sugino J.I., Terai Y., Suzuki M., Tonouchi M.
AIP Conference Proceedings 893 245 - 246 2007.12