Faculty Profiles - SUZUKI Keisuke

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Study on material removal mechanism for Cu-CMP on a patterned silicon wafer Reviewed International journal

Bakier M.A.Y.A., Matsumoto R., Fuchiwaki M., Khajornrungruang P., Suzuki K.

10th International Conference on Leading Edge Manufacturing Technologies in 21st Century, LEM 2021 243 - 245 2021.01

Investigation on the Abrasive Phenomenon of Colloidal SiO<inf>2</inf> Particles and Water-soluble C<inf>60</inf> Inclusion Complex Particles in the CMP Process of the 4H-SiC Substrate Wafer Reviewed

Tsai Y.H., Suzuki K., Chen C.C.A., Khajornrnrungruang P.

10th International Conference on Leading Edge Manufacturing Technologies in 21st Century, LEM 2021 248 - 251 2021.01

Study on polishing method using double magnet system by superconductive assisted machining method Reviewed International journal

Suzuki K., Nakasaki T., Nakashima H., Kajornrunruan P., Onomata M., Kinoshita Y., Zhang R., Otabe E.S.

JSME 2020 Conference on Leading Edge Manufacturing/Materials and Processing, LEMP 2020 2020.01

Development of new polishing pad with a semispherical shape formed by materials with different wear rates Reviewed

ONIKI Takahiro, KATO Yuya, KHAJORNRUNGRUANG Panart, SUZUKI Keisuke, TASHIRO Yasunori, MATSUO Masaaki

Journal of the Japan Society for Abrasive Technology ( The Japan Society for Abrasive Technology ) 62 ( 5 ) 264 - 266 2018.05

Authorship：Corresponding author Language：Japanese Publishing type：Research paper (scientific journal)

We have developed a polishing pad using materials with different wear rates to achieve highly efficient polishing of difficult-to-process material substrates. Nylon fibers with good mechanical properties are arranged with other materials, followed by dressing to form protrusions on the polishing pad surface. Stable polishing performance can be expected if the orientation and arrangement of the nylon fibers can be controlled. A sapphire substrate was polished using the prototype polishing pad developed in this research. The results indicated 30% improvement in material removal rate compared to the ready-made pad.

DOI： 10.11420/jsat.62.264

Analytical on mixed colloidal silica particle in slurry of sapphire Chemical Mechanical Polishing Reviewed International journal

BUN-ATHUEK NATTHAPHON, YOSHIMOTO YUTAKA, SAKAI KOYA, KHAJORNRUNGRUANG PANART, SUZUKI KEISUKE

Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21 ( The Japan Society of Mechanical Engineers ) 2017.9 ( 0 ) 173 2017.11

Authorship：Last author Language：English Publishing type：Research paper (international conference proceedings)

Mixed colloidal silica particles as abrasive in slurries have been proposed to improve and realize a high removal rate and smooth surface without subsurface damage, on sapphire chemical mechanical polishing (CMP). Mixed silica particles were fabricated by different sizes of nano-silica particle with the range of pH 7-13. The characteristics of the mixed large and small silica particles has been observed. Dynamic light scattering (DLS) spectra results revealed that the structure of the mixed particle, the small particle at the size of 4 nm are adsorbed on the large silica particles and increase in the size of the abrasive particles. Furthermore, we found that pH value affected to abrasive particle size. In these cases, our polishing tests results show that material removal rate (MRR) of the sapphire CMP totally increase. This confirmed that mixed particles could produce a higher MRR than single colloidal silica slurry. Finally, the mechanism of sapphire removal was discussed.

DOI： 10.1299/jsmelem.2017.9.173

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低屈折率の透明樹脂パッドを用いたCMPにおけるモニタリング技術に関する研究

鬼木喬玄, 鈴木恵友, カチョーンルンルアンパナート

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2017S ( 0 ) 523 - 524 2017.01

Language：Japanese Publishing type：Research paper (scientific journal)

水と同等の屈折率を有する透明な樹脂パッドを用いて、スラリー中の微粒子観察やシリコン酸化膜の膜測など、CMPにおけるモニタリング技術に関する研究を行っている。今回は低屈折率の透明樹脂パッドを用いたモニタリング技術のコンセプトと、その足がかりとなる実験データについて報告する。

DOI： 10.11522/pscjspe.2017s.0_523

5G・ポスト5Gに向けた次世代半導体実装の試作開発と評価技術 Reviewed

末次正, 鈴木恵友

精密工学会誌 ( 公益社団法人精密工学会 ) 88 ( 6 ) 427 - 430 2022.06

Real Time Nanoscale Observation in Cleaning Phenomena by Evanescent Field

Terayama Yutaka, Khajornrungruang Panart, Suzuki Keisuke, Mori Ryotaro, Hamada Satomi, Wada Yutaka, Hiyama Hirokuni

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2022S ( 0 ) 126 - 126 2022.03

A Novel Method for 3D Nanoscale Tracking of 100 nm Polystyrene Particles in Multi-Wavelength Evanescent Fields Microscopy – Absolute Difference Height Verification – Reviewed International journal

Blattler Aran, Khajornrungruang Panart, Suzuki Keisuke, Saenna Soraya

International Journal of Automation Technology ( Fuji Technology Press Ltd. ) 15 ( 6 ) 831 - 841 2021.11

Language：English Publishing type：Research paper (scientific journal)

Total internal reflection is an optical imaging technique for nanoparticle tracking and observation employing the scattered light from an evanescent field near the interface or reference surface. Generally, the nanoparticle behavior is the three-dimensional Brownian motion in an aqueous medium. The motion can be traced by an optical microscopy, but it cannot be traced by an electron microscopy technique. In the three-dimensional nanoparticle moving position, the X and Y positions are parallel to the surface, which can be traced by the general microscopy techniques. However, the height position Z of a nanoparticle perpendicular to the surface could not be traced without the longitudinal scanning method. Here, a novel method is proposed to investigate the 3D position of nanoparticles by applying multi-wavelength evanescent fields microscopy, which has a high spatial resolution in the Z-direction without longitudinal scanning. This paper focuses on the verification of measurement in the Z-direction. A piezoelectric actuator was employed to control the nanoparticle displacement in height Z. Standard polystyrene 100 nm particles were randomly adhered on a spherical tip that connected with the piezoelectric actuator. The spherical tip was essentially made from an optical adhesive (n = 1.348) with a refractive index close to the water for decreasing the unnecessary signal from the tip-self during nanoparticle observation in the water. The proposed method could obtain the multi-wavelength scattering lights from the observed nanoparticles by an 8-bit color camera with higher than 50 frames per second recording to investigate the 3D nanoscale tracking. The X and Y positions of nanoparticles were determined by the centroid of the scattering light intensities. The height Z was determined from the logarithm ratios between the detected scattering light intensities of both wavelengths. The measurement repeatability of the absolute difference in height between nanoparticles could be measured less than ±16 nm by using the proposed method. The penetration height measurability range was approximated at 250 nm from the reference surface.

DOI： 10.20965/ijat.2021.p0831

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Study on Nanoscale Observatory in Polishing Phenomena applying Optical Evanescent Field

Permpatdechakul Thitipat, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 102 - 103 2021.09

Language：English Publishing type：Research paper (scientific journal)

The nanoscale polishing phenomena between substrate surface, 105 nm-sized SiO2 particles slurry, and polishing pad during CMP process were experimentally observed and evaluated to identify the main factors which effectively polish a 4H-SiC substrate. The nanoscale polishing phenomena were observed in-situ by our developed compact apparatus applied an optical evanescent field. The observation is able to detect the scattering light from either the nano-abrasive particles or the pad asperities when they react to the surface to being polishing. The nanoparticle motion phenomena, which two conditions (i)only nanoparticles (without pad) and (ii)nanoparticles with pad sliding, on 4H-SiC substrate were observed. According to the observed results, the observed scattering light of nanoparticle on 4H-SiC was the ellipse shape compared with the observing on SiO2 substrate. Furthermore, we could observe the particles moved nearer and then adhered on the surface. Less particle’s Brownian motion when the particle moved nearer to the surface. In case of nanoparticle with pad sliding, we could observe only the scattering light of pad sliding because the scattering light intensity of particle is quite lower than pad. Therefore, approached nanoparticle to 4H-SiC surface phenomena might be one possible role to explain higher polishing rate CMP parameter.

DOI： 10.11522/pscjspe.2021a.0_102

Study on On-Machine Visualization of Surface Processing Phenomena in Nanoscale

Blattler Aran, Khajornrungruang Panart, Suzuki Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 588 - 589 2021.09

Language：English Publishing type：Research paper (scientific journal)

An abrasive nanoparticle behavior in chemical mechanical polishing (CMP) process is a three-dimensional (3D) motion near a substrate or reference surface. The height position is a longitudinal distance between the reference surface and nanoparticle, which is a challenge for measuring the height position in a wet condition. Our previous report could estimate the relative height of polystyrene 100 nm particles by applying multi-wavelength evanescent fields, but the absolute height was not confirmed yet. Therefore, in this report, we proposed a design concept for absolute height verification by using the developed nano-step height patterns. The nano-step height was approximately less than hundred nanometers from the reference surface. The nano-step height made from an optical resin that has a refractive index close to water to decrease the scattering light during observing nanoparticles in water. Polystyrene 100 nm particles on the nano-step height were used to estimate the absolute height of nanoparticle. The proposed concept could be used to verify the nanoparticle's absolute height in water, which can be applied to clarify the nanoparticle phenomena during the CMP process in the near future.

DOI： 10.11522/pscjspe.2021a.0_588

Real Time Nanoscale Observation in Cleaning Phenomena by Evanescent Field

Terayama Yutaka, Khajornrungruang Panart, Suzuki Keisuke, Mori Ryotaro, Hamada Satomi, Wada Yutaka, Hiyama Hirokuni

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 113 - 114 2021.09

Computational analysis of nano abrasive motion on SiC surface

Saenna Soraya, Khajornrungruang Panart, Suzuki Keisuke, Blattler Aran, Permpatdechakul Thitipat

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021A ( 0 ) 126 - 127 2021.09

Language：Japanese Publishing type：Research paper (scientific journal)

The motion of nano-silica abrasive particle before attaching to the SiC surface being polished was analyzed numerically based on Brownian motion with DLVO theory, and then was compared with the results observed by evanescent light field localized on the SiC surface. We found that, when approximately 100 nm-sized silica particles are moving in close proximity within 100 nm from the SiC substrate surface, the nanoparticles would stay intermittently with slightly oscillating behavior before attaching to the surface.

DOI： 10.11522/pscjspe.2021a.0_126

Real Time Nanoscale Observation in Cleaning Phenomena by Evanescent Field

Terayama Yutaka, Khajornrungruang Panart, Suzuki Keisuke, Mori Ryotaro, Hamada Satomi, Wada Yutaka, Hiyama Hirokuni

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2021S ( 0 ) 314 - 315 2021.03

Study on Visualization of Cleaning Phenomena in Nano-scale by Evanescent Field

KHAJORNRUNGRUANG Panart, TERAYAMA Yutaka, SUZUKI Keisuke, UTSUMI Haruki, HAMADA Satomi, WADA Yutaka, HIYAMA Hirokuni

The Proceedings of Conference of Kanto Branch ( The Japan Society of Mechanical Engineers ) 2021.27 ( 0 ) 10A02 2021.01

Language：Japanese Publishing type：Research paper (scientific journal)

Cleaning phenomena in semiconductor manufacturing is about the nanoparticles being removed out from, or re-adhering to, or returning to the wafer surface. However, these residual nanoparticles from polishing slurry on the wafer are usually inspected before-and-after cleaning process, not during the wet cleaning process. Accordingly, these cleaning phenomena mechanism on the surface have already not clearly known. Therefore, we have been establishing dynamically visualization of wet cleaning phenomena on the surface applying localized light called evanescent light that is generated by an optically internal reflection. This report introduces some of observed physical characteristical phenomena during duplicated scrub cleaning process of 10 and 30 nm gold particles by PVA brushes without and with skin layer, which have different contact area ratio on the surface being cleaned.

DOI： 10.1299/jsmekanto.2021.27.10a02

Other Link： https://www.jstage.jst.go.jp/article/jsmekanto/2021.27/0/2021.27_10A02/_pdf

Study on Polishing Method Using Magnetic Levitation Tool in Superconductive-Assisted Machining Reviewed International journal

Nakashima Hidetaka, Nakasaki Tatsuya, Tanaka Tatsuhiro, Kinoshita Yushi, Tanaka Yuki, Khajornrungruang Panart, Otabe Edmund Soji, Suzuki Keisuke

International Journal of Automation Technology ( Fuji Technology Press Ltd. ) 15 ( 2 ) 234 - 242 2021.01

Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)

Superconductive-assisted machining (SUAM) is a polishing method that employs a magnetic levitation tool, which is based on a superconductive phenomenon called the pinning effect. Since the tool magnetically levitates, the issue of tool interference is eliminated. In this study, in order to set up the polishing conditions of the magnetic levitation tool, we evaluated the relation between the flux density distribution relative to the tool position and the holding force acting on the magnetic levitation tool to maintain its initial position, set by field cooling by the superconducting bulk. For the holding force, we measured the attractive, repulsive, restoring, and driving forces. We found that the greater the holding force, the smaller the initial distance between the superconducting bulk and the magnetic levitation tool. The attractive force was found to peak when the levitated tool was displaced 6 mm from an initial position of 9 mm from the bulk, and it became only the self-weight of the magnetic levitation tool at displacements of 30 mm and above, where the pinning effect broke down. We then evaluated the polishing characteristics for SUS304 and A1100P at a tool displacement that results in the maximum attractive force. In the polishing experiment, we employed a water-based diamond slurry because the temperature of the workpiece was close to room temperature. We found that it was possible to polish SUS304 and A1100P while avoiding the effects of magnetization due to the polishing pressure or induced currents that accompany the rotation of the metal plate. The arithmetic average roughness, Ra, of A1100P was relatively high due to the effect of scratches, while that of SUS304 improved from 92 nm before polishing to 55 nm after polishing when polished with grains with a diameter of 1 μm.

DOI： 10.20965/IJAT.2021.P0234

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Investigation on the Abrasive Phenomenon of Colloidal SiO2 Particles and Water-soluble C60 Inclusion Complex Particles in the CMP Process of the 4H-SiC Substrate Wafer Reviewed International journal

Tsai Yueh-Hsun, Suzuki Keisuke, Chen Chao-Chang A., Khajornrnrungruang Panart

Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21 ( The Japan Society of Mechanical Engineers ) 2021.10 ( 0 ) 094-114 2021.01

Language：English Publishing type：Research paper (international conference proceedings)

This study used a water-soluble inclusion complex, fullerene/β-cyclodextrins(C60/β-CDs), as additive abrasive with conventional SiO2 slurry for the chemical mechanical polishing/planarization(CMP) of the silicon carbide substrate wafer. The hydrodynamic size(dH) of C60/β-CDs suspension was measured by the dynamic light scattering(DLS) method; the appearance of a C60/β-CDs inclusion complex is observed by TEM. The C60/β-CDs hybrid SiO2-based slurry performed a higher removal rate than conventional SiO2 slurry, and the polished surface showed a lower depression and roughness, too.

DOI： 10.1299/jsmelem.2021.10.094-114