論文 - 大村 一郎
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Demonstration of 13.56-MHz Class-E Amplifier Using a High-Voltage GaN Power-HEMT 査読有り
Saito,W.; Domon,T.; Omura,I.; Kuraguchi,M.; Takada,Y.; Tsuda,K.; Yamaguchi
Electron Device Letters, IEEE, 27 ( 5 ) 326 - 328 2006年04月
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Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications 査読有り
Saito,W.; Takada,Y.; Kuraguchi,M.; Tsuda,K.; Omura,I.
Electron Devices, IEEE Transactions on 27 ( 2 ) 356 - 362 2006年04月
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High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT 査読有り
T. Domon,I. Omura,W.Saito,K. Tsuda
Compound Semiconductor Integrated Circuit Symposium 2006 IEEE 575 - 580 2006年04月
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Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD 査読有り
M. Tsukada,I. Omura,W. Saito,T. Domon
4th International Conference on Integrated Power Electronics Systems 167 - 170 2006年04月
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A 15.5 mOhmcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing 査読有り
W. Saito,I. Omura,S. Aida S. Koduki,M. Izumisawa,H. Yoshioka,H. Okumura,M. Yamaguchi and T. Ogura
Proc on IEEE ISPSD, 2006 293 - 296 2006年04月
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A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs 査読有り
T. Ogura,K. Sugiyama,I. Omura,M. Yamaguchi,S. Teramae,N. Yamano and S. Iesaka
IEEE, ISPSD 2006 25 - 28 2006年04月
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High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process 査読有り
Saito,W.; Omura,I.; Aida,S.; Koduki,S.; Izumisawa,M.; Yoshioka,H.; Ogura,T.
Electron Devices, IEEE Transactions on 52 ( 10 ) 2317 - 2322 2005年04月
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage 査読有り
Saito W.,Kuraguchi M.,Takada Y.,Tsuda K,Omura I.,Ogura T
Electron Devices, IEEE Transactions on 52 ( 2 ) 159 - 164 2005年04月
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380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier 査読有り
Saito W.,Kuraguchi M.,Takada Y.,Tsuda K.,Domon T.,Omura I.,Yamaguchi M.
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International 2005年04月
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Demonstration of High Power Density(30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver 査読有り
M. Tsukuda,I. Omura,T. Domon,W. Saito and T. Ogura
5th International Power Electronics Conference S32-4 2005年04月