論文 - 大村 一郎
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Role of Simulation Technology for the Progress in Power Devices and Their Applications 招待有り 査読有り
Hiromichi Ohashi, Ichiro Omura
IEEE TRANSACTION ON ELECTRON DEVICES 60 ( 2 ) 528 - 536 2013年02月
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IGBT Scaling Principle Toward CMOS Compatible Wafer Processes 査読有り
Masahiro Tanaka, Ichiro Omura
Solid-State Electronics 800 118 - 123 2012年11月
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Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustics Tomography(SAT) 査読有り
Akihiko Watanabe, Ichiro Omura
Microelectronics Reliability 52 ( 9-10 ) 2081 - 2086 2012年09月
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Bonding Wire Current Measurement with Tiny Film Current Sensors 査読有り
Hidetoshi Hirai, Yuya Kasho, Masanori Tsukuda and Ichiro Omura
Proc. of ISPSD 287 - 290 2012年06月
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Scattering Parameter Approach to Power MOSFET Design for EMI 査読有り
Masanori Tsukuda, Keiichiro Kawakami and Ichiro Omura
Proc. of ISPSD 181 - 184 2012年06月
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Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility 査読有り
Masahiro Tanaka and Ichiro Omura
Proc. of ISPSD 177 - 180 2012年06月
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Universal Trench Edge Termination Design 査読有り
Kota Seto, Ryu Kamibaba, Masanori Tsukuda and Ichiro Omura
Proc. of ISPSD 161 - 164 2012年06月
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"Design for EMI" approach on power PiN diode reverse recovery 査読有り
M. Tsukuda, K. Kawakami, K. Takahama, I. Omura
Microelectronics Reliability ( 51 ) 1972 - 1975 2011年10月
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Structure oriented compact model for advanced trench IGBTs without fitting 査読有り
M. Tanaka, I. Omura
Microelectronics Reliability ( 51 ) 1933 - 1937 2011年10月
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Tiny-scale ‘‘stealth’’ current sensor to probe power semiconductor device failure 査読有り
Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura
Microelectronics Reliability ( 51 ) 1689 - 1692 2011年10月
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Full Digital Short Circuit Protection for Advanced IGBTs 査読有り
Takuya Tanimura, Kazufumi Yuasa and Ichiro Omura
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011年05月
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Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV 査読有り
Motohiro Tsuda, Yasuaki Matsumoto, and Ichiro Omura
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's 2011年05月
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Design of Trench Termination for High Voltage Devices 査読有り
Ryu Kamibaba,Kenichi Takahama,Ichiro Omura
ISPSD'10 2010年04月
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Challenge to the Barrier of Conduction Loss in PiNDiode toward VF<300 mV with Pulsed CarrierInjection Concept 査読有り
Yasuaki Matumoto,Kenichi Takahama,Ichiro Omura
ISPSD'10 2010年04月
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Numerical study on very high speed silicon PiN diodepossibilityfor power ICs in comparison with SiC-SBD 査読有り
Kenichi Takahama,Ichiro Omura
ISPSD'10 2010年04月
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Ultra High Speed Short Circuit Protection for IGBTwith Gate Charge Sensing 査読有り
Kazufumi Yuasa,Soh Nakamichi,Ichiro Omura
ISPSD'10 2010年04月
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Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs 査読有り
Wataru Saito,Takao Noda,Masahiko Kuraguchi,Yoshiharu Takada,Kunio Tsuda,Yasunobu Saito,Ichiro Omura,Masakazu Yamaguchi
IEEE-Trans on Electron Devices 56 ( 7 ) 2009年04月
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Non-Destructive Current Measurement for Surface Mounted Power MOSFET on VRM Board Using Magnetic Field Probing Technique 査読有り
Yoshiko Ikeda,Yoshihiro Yamaguchi,Yusuke Kawaguchi,Masakazu Yamaguchi,Ichiro Omura
IEEE 21st International Symposium on Power Semiconductor Devices & ICs ( 66-68 ) 2008年04月
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Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT 査読有り
Wataru Saito,Tomokazu Domon,Ichiro Omura
IEEE Power Electronics Specialists Conference 3324 - 3329 2008年04月
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Critical IGBT Design Regarding EMI and Switching Losses 査読有り
M. Tsukuda,I. Omura
Proc of ISPSD 2008 185 - 188 2008年04月