研究者詳細 - 大村　一郎

論文 - 大村　一郎

分割表示190 件中 61 - 80 件目／全件表示 >>

Development of fast short-circuit protection system for advanced IGBT 査読有り

M. Ichiki, T. Arimoto, S. Abe, M. Tsukuda, I. Omura

Microelectronics Reliability 101-101 113408 2019年09月

Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices 査読有り

Akihiko Watanabe, Naoto Hirose, Hyoungseop Kim and Ichiro Omura

Microelectronics Reliability 101-101 113399 2019年09月

Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters 査読有り

Sudo, M. Nagamatsu, T. Tsukuda, M. Omura, I.

Microelectronics Reliability 101-101 113396 2019年09月

Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method 査読有り

S. Sasaki, N. Mitsugi, S. Samata, W. Manabe, M. Tsukuda, H. Y.-Kaneta, I. Omura

2019 International Conference on Solid State Devices and Materials 2019年09月

Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer 査読有り

Satoshi Torimi, Yoshiki Obiyama, Masanori Tsukuda and Ichiro Omura

2019 International Conference on Solid State Devices and Materials 2019年09月

Active Voltage Balancing for Series Connected IGBT System using Gate Delay Control 査読有り

Ravi Nath Tripathi, Kouji Harasaki, Masanori Tsukuda, Ichiro Omura

2019 International Conference on Solid State Devices and Materials 2019年09月

Load current and temperature dependent optimization of active gate driving vectors 査読有り

Sai T., Miyazaki K., Obara H., Mannen T., Wada K., Omura I., Takamiya M., Sakurai T.

2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 3292 - 3297 2019年09月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

A load current and temperature dependent optimization of the active gate driving waveforms is proposed to always solve the trade-off between the switching loss and the current/voltage overshoot of power transistors under load current and temperature variations. The switching loss and the current/voltage overshoot in turn-on/off state of IGBT using optimized gate driving vectors obtained by an automatic optimization are measured by using a 6-bit programmable digital gate driver IC across nine conditions including different load currents (20 A, 50 A, and 80 A) and temperatures (25 °C, 75 °C, and 125 °C). They are compared with those with conventional single-step gate driving waveforms using an object function as a function of the normalized loss and overshoot. When the optimized gate driving vector at a typical operation point of (50 A, 25 °C) is reused in other eight conditions, the object functions at eight conditions are better or worse than those of the conventional single-step driving. In contrast, when the gate driving vector is optimized at each condition, the object functions at all eight conditions are better than those of the conventional single-step driving in both turn-on and turn-off states, which clarifies the necessity of the proposed optimization. To implement the proposed optimization, a lookup table based active gate controller, which provides a preset optimum driving vector depending on the load current and the temperature, will be effective.

DOI： 10.1109/ECCE.2019.8913103

Scopus

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Output-Current Measurement of a PWM Inverter with a Tiny PCB Rogowski Sensor Integrated into an IGBT Module 査読有り

Hasegawa K., Sho S., Tsukuda M., Omura I., Ichiki M., Kato T.

2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 5707 - 5711 2019年09月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Inverters used in motor-drive and grid-connected applications usually employ current sensors at the output terminal because they have to control the output current. Existing current sensors like the Hall sensor and the current transformer are a constraint to reduce the volume and cost of the inverter. This paper proposes an output-current measurement method of a PWM inverter using a tiny PCB sensor that is based on the so-called Rogowski coil and can be integrated into an IGBT module. The method utilizes the switching current of the low-side switch for reproducing the output current, which allows using the PCB sensor because the switching current consists of high-frequency components. The method uses a single PCB sensor per leg and takes the polarity of the output current into account. Experimental results using a half-bridge sinusoidal PWM inverter verify that the proposed method measures the output current including its fundamental frequency component, switching ripple one, and polarity.

DOI： 10.1109/ECCE.2019.8912662

Scopus

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3300V Scaled IGBTs Driven by 5V Gate Voltage 査読有り

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Sato, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs 2019年05月

A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit 査読有り

K. Hasegawa, S. Nishizawa, and I. Omura

IEEJ Journal of Industry Applications 8 ( 3 ) 480 - 487 2019年05月

Mutual inductance influence to switching speed and TDR measurements for separating self- and mutual inductances in the package 査読有り

H. Iida, K. Hasegawa, I. Omura

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 503 - 506 2019年05月

Analog Basis, Low-Cost Inverter Output Current Sensing with Tiny PCB Coil Implemented inside IPM 査読有り

Battuvshin Bayarkhuu, Bat-Otgon Bat-Ochir, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 251 - 254 2019年05月

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT 査読有り

Tsukuda Masanori, Sudo Masaki, Hasegawa Kazunori, Abe Seiya, Saraya Takuya, Takakura Toshihiko, Fukui Munetoshi, Itou Kazuo, Suzuki Shinichi, Takeuchi Kiyoshi, Ninomiya Tamotsu, Hiramoto Toshiro, Omura Ichiro

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 339 - 342 2019年05月

Gate Waveform Optimization in Emergency Turn-Off of IGBT Using Digital Gate Driver 査読有り

Miyazaki K., Wada K., Omura I., Takamiya M., Sakurai T.

ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia 3292 - 3296 2019年05月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

IGBTs need to be immediately turned off when a short circuit occurs [1]. This paper discusses the optimized gate control in this emergency turn-off process. The optimized gate waveform minimizes the energy loss, hence the heat generation, while keeping the maximum collector-emitter voltage overshoot within a certain allowable value. The optimized waveform is found by theoretical analysis and is verified by measurements for the first time. Analytical expressions are derived for the optimized control, which explains well the experimental results. The optimized gate waveform is realized only by a digital gate driver (DGD)whose output drivability is programmable over 64 strength levels. The DGD decreases the energy loss by 22 % compared with the conventional resistor gate driver [2]-[4].

Scopus

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Load Current and Temperature Dependent Optimization of Active Gate Driving Vectors 査読有り国際誌

Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Makoto Takamiya, Takayasu Sakurai

The Eleventh Annual Energy Conversion Congress and Exposition　（ECCE） 2019年03月

Vertical Bipolar Transistor Test Structure for Measuring　Minority Carrier Lifetime in IGBTs 査読有り

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, I. Muneta, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai,　S. Nishizawa, I. Omura6, H. Ohashi, and T. Hiramoto

ICMTS2019（32nd IEEE International Conference on Microelectronic Test Structures） 2019年03月

Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers 査読有り国際誌

Toru Sai, Koutaro Miyazaki, Hidemine Obara, Tomoyuki Mannen, Keiji Wada, Ichiro Omura, Takayasu Sakurai and Makoto Takamiya

IEEE Applied Power Electronics Conference and Exposition (APEC) 2019年03月

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss 査読有り

Saraya T., Itou K., Takakura T., Fukui M., Suzuki S., Takeuchi K., Tsukuda M., Numasawa Y., Satoh K., Matsudai T., Saito W., Kakushima K., Hoshii T., Furukawa K., Watanabe M., Shigyo N., Tsutsui K., Iwai H., Ogura A., Nishizawa S., Omura I., Ohashi H., Hiramoto T.

Technical Digest - International Electron Devices Meeting, IEDM 2018-December 8.4.1 - 8.4.4 2019年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Functional trench-gated 1200V-10A class Si-IGBTs, designed based on a three dimensional (3D) scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage.

DOI： 10.1109/IEDM.2018.8614491

Scopus

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Optimal double sided gate control of IGBT for lower turn-off loss and surge voltage suppression 査読有り

Harada S., Tsukuda M., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased. In order to address this problem, we propose a double sided gate IGBT and optimal gate control method for lower turn-off loss. TCAD simulation numerically shows that the proposed IGBT successfully decreases turn-off loss. Furthermore, the turn-off loss is further decreased with optimal control of the double sided gate without surge voltage increase. In addition, we consider the effects of stray inductance on the performance of double sided gate IGBT.

Scopus

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Magnetic flux signal simulation with 16-channel sensor array to specify accurate IGBT current distribution 査読有り

Tsukuda M., Matsuo K., Tomonaga H., Okoda S., Noda R., Tashiro K., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Current crowding of IGBT and power diodes in a chip or among chips is a barrier to the realization of highly-reliable power modules and power electronics systems. Current crowding occurs because of stray inductance imbalance, difference of chip characteristics and temperature imbalance among chips. Although current crowding among IGBT or power diode chips has been analyzed by numerical simulation, no sensor with sufficiently high special resolution and fast measurement time has yet been developed. Therefore, we developed a 16-channel sensor array and demonstrated IGBT current distribution imaging. By using the developed simulation method for the sensor array, the accuracy of the magnetic flux signals was confirmed. In future work, we will apply the simulation method to specify the IGBT current distribution corresponding to the structure of bonding wire and other wiring.

Scopus

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論文 - 大村　一郎