研究者詳細 - 大村　一郎

論文 - 大村　一郎

分割表示190 件中 141 - 160 件目／全件表示 >>

New measurement base De-embedded CPU load model for power delivery network design 査読有り

Okano M., Watanabe K., Naitoh M., Omura I.

9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia 2288 - 2293 2015年07月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

CPU load model including on-chip wiring and package interconnection has been required for printed circuit board (PCB) design of digital products according to the improvement in the speed of CPU operation in recent years. Especially, accurate power delivery network (PDN) information inside CPU is indispensable for PCB design according to requirement of low-impedance and the broadband (from DC to GHz) from the inside of CPU to DC-DC converter. While the detailed impedance information inside CPUs is not disclosed to PCB board designers with the complicated back-end and front-end production design for CPU chip and package. This paper aims to establish new methodology to extract CPU load model with combination of measurement and simulation. The method is simple yet powerful for high-end CPU board design.

DOI： 10.1109/ICPE.2015.7168125

Scopus

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New Measurement Base De-embedded CPU Load Model for Power Delivery Network Design 査読有り

Motochika Okano, Koji Watanabe, Masamichi Naitoh, and Ichiro Omura

9th International Conference on Power Electronics – ECCE Asia 2015年06月

60 GHz Wireless Signal Transmitting Gate Driver for IGBT 査読有り

Kenichi Yamamoto, Fumio Ichihara, Kazunori Hasegawa, Masanori Tsukuda, and Ichiro Omura

Proc. of ISPSD2015 133 - 136 2015年05月

Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation 査読有り

Masanori Tsukuda, Hironori Imaki, Ichiro Omura

Solid State Electronics 104 61 - 69 2014年12月

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge 査読有り

K. Hasegawa, K. Yamamoto, H. Yoshida, K. Hamada, M. Tsukuda, I. Omura

Microelectronics Reliability 54 1897 - 1900 2014年09月

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: part II 査読有り

J. Takaishi, S. Harada, M. Tsukuda, I. Omura

Microelectronics Reliability 54 1891 - 1896 2014年09月

High Speed Real-time Temperature Monitoring System inside Power Devices Package Using Infrared Radiation 査読有り

N. Hirata, A. Watanabe and I. Omura

The 2014 International Conference Solid State Devices and Materials 1016 - 1017 2014年09月

Ultra-fast Lateral 600 V Silicon PiN Diode Superior to SiC-SBD 査読有り

Masanori Tsukuda, Hironori Imaki and Ichiro Omura

Proc. of ISPSD2014 31 - 31 2014年06月

Rea-time failure monitoring system for high power IGBT under acceleration test up to 500A stress 査読有り

Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD2014 338 - 341 2014年06月

Internal degradation monitoring of power devices during power cycling test 査読有り

Akihiko Watanabe, Masahiro Tsukuda and Ichiro Omura

International Conference on Integrated Power Electronics System 2014年02月

High-throughput DBC-assembled IGBT screening for power module 査読有り

Masanori Tsukuda, Seiichi Okoda, Ryuzo Noda, Katsuji Tashiro and Ichiro Omura

International Conference on Integrated Power Electronics System 2014年02月

Real-time failure monitoring system for high power IGBT under acceleration test up to 500 A stress 査読有り

Watanabe A., Omura I., Tsukuda M.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 338 - 341 2014年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Real-time failure monitoring system for IGBT module was demonstrated under 500 A power cycling test. The system successfully captured internal phenomena occurred in interface regions of the device under test. Moreover, we proposed realtime failure analysis method by combining the real-time monitoring and image processing techniques. This failure analysis method enables to distinguish the place where degradation occurs in DUT and also trace internal degradation process to failure. © 2014 IEEE.

DOI： 10.1109/ISPSD.2014.6856045

Scopus

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Ion-beam irradiation effect in the growth process of graphene on silicon carbide-on-insulator substrates 査読有り

Okano M., Edamoto D., Uchida K., Omura I., Ikari T., Nakao M., Naitoh M.

Materials Science Forum 778-780 1170 - 1173 2014年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar ions at a dose of 4.5 × 10 cm in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface. © (2014) Trans Tech Publications, Switzerland. + 15 -2

DOI： 10.4028/www.scientific.net/MSF.778-780.1170

Scopus

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Internal degradation monitoring of power devices during power cycling test 査読有り

Watanabe A., Tsukuda M., Omura I.

CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings 2014年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

A technique to monitor internal degradation to failure of power devices in real time was proposed. Required components for this technique are (1) non-destructive inside imaging, (2) power stress control and (3) device cooling. We constructed the system with scanning acoustic tomography (SAT), DC power supply controlled by own made program and water cooling system, respectively. In the case of a TO-3P packaged MOSFET, propagation of internal degradations to failure was successfully recorded as time series data by using this system. At the present time, the system is modified for high power and large size IGBT modules.

Scopus

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High-throughput DBC-assembled IGBT screening for power module 査読有り

Tsukuda M., Okoda S., Noda R., Tashiro K., Omura I.

CIPS 2014 - 8th International Conference on Integrated Power Electronics Systems, Proceedings 2014年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

High-throughput DBC-assembled IGBT screening equipment for a production line is under development in order to prevent early failure of power modules. The equipment has been planning to have automatic GO/NO GO judgment technology by high-throughput measurement of current signal distribution with non-contact sensor arrays with small coils over the bonding wires of IGBT chips. Basic technology and Prototypes of a sensor, an analog amplifier, digital compensation technology, a test head and power circuit have been almost completed. The authors will fabricate the sensor arrays and develop GO/NO GO judgement technology with the integration of a basic technology.

Scopus

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Real time degradation monitoring system for high power IGBT module under power cycling test 査読有り

A. Watanabe, M. Tsukuda and I. Omura

Microelectronics Reliability ( 53 ) 1692 - 1696 2013年10月

“IGBT chip current imaging system by scanning local magnetic field” 査読有り

Hiroaki Shiratsuchi, Kohei Matsushita, Ichiro Omura

Microelectronics Reliability ( 53 ) 1409 - 1412 2013年10月

Real Time Monitoring System for Internal Process to Failure of High Power IGBT 査読有り

Akihiko Watanabe, Masanori Tsukuda and Ichiro Omura,

The 2013 International Conference on Solid State Devices and Materials 1046 - 1047 M-2-4 2013年09月

High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current 査読有り

Yamato Miki, Makoto Mukunoki, Takashi Matsuyoshi, Masanori Tsukuda, and Ichiro Omura

Proc. of ISPSD 347 - 350 8-4 2013年05月

Sub-micron Junction Termination for 1200V Class Devices toward CMOS Process Compatibility 査読有り

Kota Seto, Hironori Imaki, Junpei Takaishi, Masahiro Tanaka, Masanori Tsukuda and Ichiro Omura

Proc. of ISPSD 281 - 284 HV-P7 2013年05月

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