研究者詳細 - 大村　一郎

論文 - 大村　一郎

分割表示190 件中 101 - 120 件目／全件表示 >>

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications 査読有り

S. Abe, K. Hasegawa, M. Tsukuda, K. Wada, I. Omura, T. Ninomiya

Microelectronics Reliability 66-67 465 - 469 2017年09月

3D scaling for insulated gate bipolar transistors (IGBTs) with low V<inf>ce(sat)</inf> 査読有り

Tsutsui K., Kakushima K., Hoshii T., Nakajima A., Nishizawa S., Wakabayashi H., Muneta I., Sato K., Matsudai T., Saito W., Saraya T., Itou K., Fukui M., Suzuki S., Kobayashi M., Takakura T., Hiramoto T., Ogura A., Numasawa Y., Omura I., Ohashi H., Iwai H.

Proceedings of International Conference on ASIC 2017-October 1137 - 1140 2017年07月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - V reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs. ce(sat)

DOI： 10.1109/ASICON.2017.8252681

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85044718318&origin=inward

General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm 査読有り

K. Miyazaki, S. Abe, M. Tsukuda, I. Omura, K. Wada, M. Takamiya, and T. Sakurai

IEEE Transactions on Industry Applications 53 ( 3 ) 2350 - 2357 2017年07月

Formulation of Single Event Burnout Failure Rate for High Voltage Devices in Satellite Electrical Power System 査読有り

Yuji Shiba, Erdenebaatar Dashdondog, Masaki Sudo, Ichiro Omura

Proc. of ISPSD 2017 2017年06月

Current Distribution Based Power Module Screening by New Normal/Abnormal Classification Method, with Image Processing 査読有り

Masanori Tsukuda, Daisuke Yuki, Hiroki Tomonaga, Hyoungseop Kim, Ichiro Omura

Proc. of ISPSD 2017 2017年06月

New Power Module Integrating Output Current Measurement Function 査読有り

S. Tabata, K. Hasegawa, M. Tsukuda, I. Omura

Proc. of ISPSD 2017 2017年06月

An Evaluation Circuit for DC-Link Capacitors used in a Single-Phase PWM Inverter 査読有り

Kazunori Hasegawa, Ichiro Omura, Shin-ichi Nishizawa

PCIM Europe2017 2017年05月

High-performance vertical Si PiN diode by hole remaining mechanism 査読有り

Tsukuda M., Baba A., Shiba Y., Omura I.

Solid-State Electronics 129 22 - 28 2017年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

DOI： 10.1016/j.sse.2016.12.006

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007414024&origin=inward

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors 査読有り

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, and Vipindas Pala,

IEEE TRANSACTIONS ON ELECTRON DEVICES 63 ( 3 ) 856 - 873 2017年03月

A New Output Current Measurement Method with Tiny PCB Sensors Capable of Being Embedded in an IGBT Module 査読有り

K. Hasegawa, S. Takahara, S. Tabata, M. Tsukuda, and I. Omura

IEEE Trans. Power Electron 32 ( 3 ) 1707 - 1712 2017年03月

A new output current measurement method with tiny PCB sensors capable of being embedded in an IGBT module 査読有り

Hasegawa K., Takahara S., Tabata S., Tsukuda M., Omura I.

IEEE Transactions on Power Electronics 32 ( 3 ) 1707 - 1712 2017年03月

記述言語：英語掲載種別：研究論文（学術雑誌）

This paper proposes a new output current measuring method using tiny printed-circuit-board (PCB) current sensors. The method will make it possible to install the PCB current sensors in an insulated-gate bipolar transistor (IGBT) module. The PCB sensor picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on field-programmable gate array and an integrator circuit reproduces the output current of an inverter from the switching current. A proof-of-concept experimental verification is carried out using a buck converter, which verifies that the proposed method detects a dc component of the output current as well as a ripple component although the PCB sensor is based on the so-called Rogowski coil.

DOI： 10.1109/TPEL.2016.2606111

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85027502487&origin=inward

スケーリングIGBTが拓(ひら)くパワーエレクトロニクスの新しいパラダイム招待有り査読有り

平本俊郎, 大村一郎

応用物理 ( 社団法人応用物理学会 ) 86 ( 11 ) 956 - 961 2017年01月

記述言語：日本語掲載種別：記事・総説・解説・論説等（学術雑誌）

<p>絶縁ゲート型バイポーラトランジスタ（IGBT）のスケーリング則は，デバイス性能の向上に加えて，ゲートドライブ電圧の低減により集積回路と一体化することを可能とする．我々は量産性に優れたシリコンテクノロジーと独自のスケーリングIGBTの概念をベースに，IoT（Internet of Things）や人工知能（AI）を駆使してパワーデバイス制御を自動最適化するパワーエレクトロニクスの新パラダイム構築を目指している．本稿ではその基本コンセプトと研究の一部を紹介する．</p>

DOI： 10.11470/oubutsu.86.11_956

CiNii Article

その他リンク： https://ci.nii.ac.jp/naid/130007715469

New power module integrating output current measurement function 査読有り

Tabata S., Hasegawa K., Tsukuda M., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 267 - 270 2017年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

This paper proposes a new power module concept that integrates output current measurement function to make inverters compact. The current measurement function is realized by tiny printed-circuit-board (PCB) Rogowski coils. The PCB Rogowski coil picks up a switching current flowing through an IGBT chip, and then a combination of a digital circuit based on a field-programmable-gate-array (FPGA) and an integrator circuit reproduces the output current of the inverter from the switching current. A major concern of the new power module is the effect of reverse recovery current of free-wheeling diodes because the reverse recovery current is superimposed on the switching current. This paper proposes a mitigating method of the reverse recovery current.

DOI： 10.23919/ISPSD.2017.7988911

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028518704&origin=inward

Formulation of single event burnout failure rate for high voltage devices in satellite electrical power system 査読有り

Shiba Y., Dashdondog E., Sudo M., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 167 - 170 2017年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Single-Event Burnout (SEB) is a catastrophic failure in the high voltage devices that is initiated by the passage of particles during turn-off state. Previous papers reported that SEB failure rate increases sharply when applied voltage exceeds a certain threshold voltage. On the other hand, the high voltage devices for the artificial satellite have been increasing. In space, due to increase flux of particle, it is predicted that SEB failure rate will be higher. In this paper, we proposed the failure rate calculation method for high voltage devices based on SEB cross section and flux of particles. This formula can calculate the failure rate at space level and terrestrial level depending on the applied voltage of the high voltage devices.

DOI： 10.23919/ISPSD.2017.7988937

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028501090&origin=inward

Current distribution based power module screening by new normal/abnormal classification method with image processing 査読有り

Tsukuda M., Yuki D., Tomonaga H., Kim H., Omura I.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 407 - 410 2017年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

We developed a screening equipment for ceramic substrate level power module of IGBT. The equipment realizes a new screening test with current distribution. The equipment acquires magnetic field signals over bonding wires and finally classifies to normal/abnormal module automatically. We established statistics based normal/abnormal classification with image processing. It is expected to be applied for screening in a production line and analysis to prevent the failure of power modules.

DOI： 10.23919/ISPSD.2017.7988970

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028510316&origin=inward

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter 査読有り

Hasegawa K., Omura I., Nishizawa S.

PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 2017年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

High-power conversion systems are based not only on three-phase inverters but also on singlephase inverters because modular multilevel cascade converters (MMCC) consist of half- or fullbridge single-phase converters. Their DC-link capacitors are a major constraint on the improvement of power density as well as of reliability. Evaluation of dc-link capacitors in terms of power loss, ageing, and failure rate will play an important role in the next-generation power converters. This paper presents an evaluation circuit for dc-link capacitors used in a high-power single-phase PWM inverter. The evaluation circuit produces a practical ripple current waveform and a dc bias voltage into a capacitor under test with a downscaled voltage-rating inverter, which is equivalent to those of the full-scale inverter. Theoretical analysis and experimental results verify the effectiveness of the evaluation circuit.

DOI： 10.1109/SBMicro.2017.7990846

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040555124&origin=inward

High-performance vertical Si PiN diode by hole remaining mechanism 査読有り

Masanori Tsukuda , Akiyoshi Baba, Yuji Shiba, Ichiro Omur

Solid-State Electronics 129 22 - 28 2016年12月

20-ns Short-Circuit Detection Scheme with High Variation-Tolerance based on Analog Delay Multiplier Circuit for Advanced IGBTs 査読有り国際誌

Koutaro Miyazaki, Ichiro Omura, Makoto Takamiya and Takayasu Sakurai

IEEE Southern Power Electronics Conference (SPEC) 2016年12月

Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT 査読有り

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, and H. Iwai

2016 IEEE International Electron Devices Meeting 2016年12月

Mutual Inductance Measurement for Power Device Package Using Time Domain Reflectometry 査読有り

Kazunori Hasegawa, Keiji Wada, Ichiro Omura

ECCE2016 2016年09月

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論文 - 大村 一郎

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論文 - 大村　一郎