研究者詳細 - 大村　一郎

論文 - 大村　一郎

分割表示190 件中 81 - 100 件目／全件表示 >>

Application-specific micro Rogowski coil for power modules -Design tool, novel coil pattern and demonstration- 査読有り

Koga M., Tsukuda M., Nakashima K., Omura I.

CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

We developed a printed circuit board “Rogowski coil” to improve the reliability of power modules and packages. For the design, we used a new tool for sensitivity and adopted a fishbone coil pattern to realize design sensitivity. The developed coil demonstrates flat sensitivity that is as good as that of commercialized current probes/sensors because the proposed coil pattern successfully cancels noise from an outside current with flat signal sensitivity by an inside current.

Scopus

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Envelop Tracking Based Embedded Current Measurement for Monitoring of IGBT and Power Converter System 査読有り国際誌

Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura

Microelectronics Reliability ( 89-90 ) 500 - 504 2018年09月

A fully digital feedback control of gate driver for current balancing of parallel connected power devices 査読有り国際誌

R.N. Tripathi, M. Tsukuda, I. Omura

Microelectronics Reliability ( 89-90 ) 505 - 509 2018年09月

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena 査読有り国際誌

M. Tsukuda, S. Abe, K. Hasegawa, T. Ninomiya, I. Omura

Microelectronics Reliability ( 89-90 ) 482 - 485 2018年09月

A power cycling degradation inspector of power semiconductor devices 査読有り国際誌

A. Watanabe, I. Omura

Microelectronics Reliability ( 89-90 ) 458 - 461 2018年09月

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier 査読有り国際誌

K. Hasegawa, S. Nishizawa, I. Omura

Microelectronics Reliability ( 89-90 ) 433 - 437 2018年09月

Calorimetric Power-Loss Measurement of a High-Power Film Capacitor with Actual Ripple Current Generated by a PWM Inverter 査読有り国際誌

Kazunori Hasegawa, Ichiro Omura

ECCE2018 (IEEE ENERGY CONVERSION CONGRESS & EXPO) 2018年09月

Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil 査読有り国際誌

Takaaki Arimoto, Masanori Tsukuda, Seiya Matsuura, Ichiro Omura

14th International Seminar on Power Semiconductors 2018年08月

An Evaluation Circuit for DC-Link Capacitors Used in a High-Power Three-Phase Inverter with Condition Monitoring 査読有り

Hasegawa, K., Omura,I., Nishizawa, S.

2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 1938 - 1942 2018年05月

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET 査読有り

Kobayashi K., Sudo M., Omura I.

Japanese Journal of Applied Physics 57 ( 4 ) 2018年04月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C curves as three divided components. Output charge (Q ) and stored energy (E ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q loss increased depending on switching frequency. This analysis reveals that Q may become a significant issue in next-generation high-efficiency FP-MOSFETs. oss oss oss oss oss oss

DOI： 10.7567/JJAP.57.04FR14

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85044467697&origin=inward

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET 査読有り

Kenya Kobayashi, Masaki Sudo, Ichiro Omura

Japanese Journal of Applied Physics 57 2018年03月

Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection 査読有り

M. Tsukuda, T. Arimoto and I. Omura

The 10th International Conference on Integrated Power Electronics Systems (CIPS 2018) 2018年03月

Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application 査読有り

Kenya Kobayashi, Masaki Sudo, Ichiro Omura

The 10th International Conference on Integrated Power Electronics Systems (CIPS 2018) 2018年03月

Power loss analysis of 60 V trench field-Plate MOSFETs utilizing structure based capacitance model for automotive application 査読有り

Kobayashi K., Sudo M., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 122 - 127 2018年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

We propose a structure based capacitance model for output capacitance (Coss) and reverse transfer capacitance (Crss) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Qoss), stored energy (Eoss) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FP-MOSFET’s features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85085735535&origin=inward

Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection 査読有り

Tsukuda M., Arimoto T., Omura I.

CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems 430 - 434 2018年01月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

Destruction under unclamped inductive switching is typical, catastrophic destruction phenomena. We used our original printed circuit board Rogowski sensor and monitored current filaments in IGBT under unclamped inductive switching conditions at emitter pads of IGBT devices. The current filament varied a little by switching condition. Even with the same switching condition, the current varied a little from sample to sample. Temperature and photoemission monitoring was sufficient to analyse a major current filament under unclamped inductive switching condition from the standpoint of time resolution. The spatial resolution of current monitoring should be improved to monitor minor phenomena of current filaments.

Scopus

その他リンク： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85080581925&origin=inward

スケーリングIGBTが拓くパワーエレクトロニクスの新しいパラダイム査読有り

平本俊郎, 大村一郎

応用物理 2017年11月

Structure Based Compact Model for Output Capacitance of Trench Field-Plate MOSFET to Enable Power Loss Prediction 査読有り

Kenya Kobayashi, Masaki Sudo, Ichiro Omura

2017 International Conference on Solid State Devices and Materials 2017年09月

Temperature Distribution Imaging inside Power Devices by Real-Time Simulation 査読有り

A. Watanabe, R. Nagao, I. Omura

2017 International Conference on Solid State Devices and Materials 2017年09月

Clamp type built-in current sensor using PCB in high-voltage power modules 査読有り

M. Tsukuda, K. Nakashima, S. Tabata, K. Hasegawa, I. Omura

Microelectronics Reliability 66-67 517 - 521 2017年09月

Real-time imaging of temperature distribution inside a power device under a power cycling test 査読有り

A. Watanabe, R. Nagao, I. Omura

Microelectronics Reliability 66-67 490 - 494 2017年09月

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