Faculty Profiles - KHAJORNRUNGRUANG, Panart

Papers - KHAJORNRUNGRUANG, Panart

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Mechanical property of copper complexing film and interaction between SiO<sub>2</sub> particle in slurry and the film

Imamura Akira, Kimura Keiichi, Panart Khajornrungruang, Hashiyama Yuichi, Hiyama Hirokuni, Mochizuki Yoshihiro

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1021 - 1022 2009.01

Study on Temperature Rise at Wafer and Polishing pad surfacein Chemical Mechanical Polishing (2nd report)

Ueno Kazuki, Kimura Keiichi, Khajornrungruang Panart, Koi Yuto

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1041 - 1042 2009.01

Cu-CMP with Ultraviolet Light Irradiation in Deionized Water Reviewed

Panart Khajornrungruang,Keiichi Kimura and Nobutaka Sumomogi

2008 International Conference on Planarization/CMP Technology (ICPT 2008) 120 - 124 2008.11

ヨーロッパ精密工学会第10回記念国際会議(euspen 2008)報告 Invited Reviewed

パナートカチョーンルンルアン

精密工学会誌 = Journal of the Japan Society of Precision Engineering ( 公益社団法人精密工学会 ) 74 ( 8 ) 2008.08

ヨーロッパ精密工学会第10回記念国際会議(euspen 2008)報告

パナートカチョーンルンルアン

精密工学会誌 ( 三美印刷株式会社 ) 78 ( 8 ) 810 2008.08

On-machine Tool Measurement of Tool Tip Position using Laser Diffraction Reviewed

Panart Khajornrungruang,Keiichi Kimura

International Conference of European Society for Precision Engineering and Nanotechnology (euspen2008) 2008.05

Study on material removal model in oxide CMP process

Hashiyama Yuuichi, Kimura Keiichi, Khajornrungruang Panart

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 851 - 852 2008.01

Language：Japanese Publishing type：Research paper (other academic)

This study is focused on the material removal mechanism in chemical mechanical polishing (CMP) process. The material removal phenomena in CMP process has not been clarified yet. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed with AFM and material removal mechanism was investigated. Especially in this paper, we researched about the interaction between the oxide wafer surface and fine particles. The property of SiO2 film in solution and adhesive removal phenomena with a fine particle were investigated with AFM indentation. We propose novel materials removal model based on these experiments.

DOI： 10.11522/pscjspe.2008A.0.851.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658870

Ultraviolet Light Irradiation Polishing for Cu-CMP (1st report):Ultraviolet Light Effect in Deionized Water

Khajornrungruang Panart, Kimura Keiichi, Sumomogi Nobutaka, Mori Chikara

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 835 - 836 2008.01

A study on film formation at Cu wafer surface in chemical solution

Imamura Akira, Kimura Keiichi, Khajornrungruang Panart, Hashiyama Yuichi, Sumiyoshi Hirohumi, Hiyama Hirokuni, Mochizuki Yoshihiro

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 201 - 202 2008.01

21415 A study on material removal model in CMP process : 2nd report-Investigation of material removal phenomenon using AFM

Hashiyama Yuuichi, Kimura Keiichi, Khajonrungruang Panart

The Proceedings of Conference of Kanto Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 409 - 410 2008.01

Language：Japanese Publishing type：Research paper (other academic)

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. At first, the property of SiO_2 film in solution was investigated with AFM indentation. Next, the AFM tip after indentation was observed with SEM-EDX system. In pH7〜pH 10 solution, SiO_2 film changed to soft material, and small adherent which was SiO_2 was observed in pH7 solution. This fact suggests that fine particles in slurry adhere materials from SiO_2 film with chemical adherent force.

DOI： 10.1299/jsmekanto.2008.14.409

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007705394

On-machine tool measurement of tool tip position using laser diffraction Reviewed

Khajornrungruang P., Kimura K.

Proceedings of the 10th Anniversary International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2008 2 362 - 365 2008.01

Study on CMP Micro Patterned Pad Fabricated by MEMS Technology (1st Report):Fabrication of Micro Pyramid Pattern Pad

Takahashi Naoaki, Kimura Keiichi, Khajornrungruan Panart, Yasuda Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 843 - 844 2008.01

K14 Study of Fabricated Micro Pattern Pad using CMP MEMS Technology : Characteristic Evaluation of Micro Pattern Pad Surface

Takahashi Naoaki, Kimura Keiichi, Panart Khajornrungruan

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 355 - 356 2008.01

K13 Study on Temperature Change of Wafer and Polishing pad in Chemical Mechanical Polishing

Ueno Kazuki, Wada Nagisa, Kimura Keiichi, Panart Khajornrungruang

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 353 - 354 2008.01

K12 Influence on UV irradiation on to single crystal SiC. surface

Matsumoto Tadashi, Kimura Keiichi, Panart Khajornrungruang

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 351 - 352 2008.01

K11 Study on UV-Polishing of PCD using ArF Excimer Laser

Koutake Yoshihiro, Kimura Keiichi, Panart Khajornrungruang

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 349 - 350 2008.01

Contact between Polishing Pad and Wafer in Chemical Mechanical Polishing.

Sumomogi Nobutaka, Kimura Keiichi, Khajornrungruang Panart, Ueno Kazuki

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 183 - 184 2008.01

Study on Temperature rise at Wafer and Polishing pad surface in Chemical Mechanical Polishing (1st report)

Ueno Kazuki, Kimura Keiichi, Khajornrungruang Panart, Koi Yuto, Wada Nagisa

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 839 - 840 2008.01

A Computational Study on Slurry Flow between a Wafer and CMP Pad with Grooves Reviewed

Katsuya Nagayama, Hirofumi Morishita, Keiichi Kimura, Kazuhiro Tanaka, Panart Khajornrungruang and Yousuke Inatsu

TOWARDS SYNTHESIS OF MICRO-/NANO-SYSTEMS 277 - 280 2007.10

Study on Material Removal Phenomena in CMP Process Reviewed

2007.10

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Papers - KHAJORNRUNGRUANG, Panart