Faculty Profiles - KHAJORNRUNGRUANG, Panart

Papers - KHAJORNRUNGRUANG, Panart

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Study on CMP polishing characteristic with Ultraviolet light irradiation

Sumomogi Nobutaka, Kimura Keiichi, Panart Khajornrungruang

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 305 - 306 2009.01

Study on effects of ultraviolet irradiation in Cu-CMP:Observation and investigation of reactions during ultraviolet irradiation of Cu wafer

Murali Rao, Sumomogi Nobutaka, Kimura Keiichi, Khajornrungruang Panart

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1015 - 1016 2009.01

レーザー回折を用いた工具切れ刃位置のオンマシン計測の研究:2波長レーザによる測定精度向上への試み

吉廣俊志, 木村景一, KHAJORNRUNGRUANG PANART

精密工学会学術講演会講演論文集 ( 公益社団法人精密工学会 ) 2009 ( 0 ) 815 - 816 2009.01

Language：Japanese Publishing type：Research paper (other academic)

近年の工業製品の高度機能化に伴い，工作機械による加工精度のみならず，加工工具そのものの小型化及び高精度化，さらには機上での工具管理が重要な課題となっている．本研究では，レーザの回折現象を用いた非接触かつ高精度な工具測定方法及び小型で機上に搭載できる装置の研究開発を行っている．本稿では，波長の異なる2つのレーザ光を用い，2個の同時測定データから工具位置測定のさらなる高精度化を試みたので報告する．

DOI： 10.11522/pscjspe.2009S.0.815.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130005029877

21107 Study on material removal model in CMP process : 3nd report-Investigation of material removal phenomenon with fine particle in slurry

Hashiyama Yuuichi, Kimura Keiichi, Khajornrungruang Panart

The Proceedings of Conference of Kanto Branch ( The Japan Society of Mechanical Engineers ) 2009 ( 0 ) 461 - 462 2009.01

Language：Japanese Publishing type：Research paper (other academic)

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. In this report. the property of SiO_2 film in alkalinity solution was investigated with AFM indentation. In pH8.5 solution. SiO_2 film in KOH solution is softer than SiO_2 film in NH_4OH. In pH10 solution, a property of SiO_2 film in KOH solution is quite simillar to a property of SiO, film in NH_4OH solution. This fact suggests that in pH10 solution SiO_2 film changes soft film, the a chemical reaction layer in KOH solution is the same as a chemical layer solution in NH_4OH.

DOI： 10.1299/jsmekanto.2009.15.461

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007722430

S1303-1-4 On-Machine Tool Measurement Precision Improvement using dual wavelength laser diffraction

Khajornrungruang Panart, Kimura Keiichi, Yoshihiro Shunji

The proceedings of the JSME annual meeting ( The Japan Society of Mechanical Engineers ) 2009 ( 0 ) 273 - 274 2009.01

Authorship：Lead author Language：Japanese Publishing type：Research paper (other academic)

In these days, ultra precision, high complexity and high efficiency of fine-fabrication using cutting tool are required. Not only performance of machine tool but also downsizing of high accurate working tool itself has been an important issue to realize the requirements. In this study, on-machine tool measurement technology using laser diffraction which is able to manage micro tool and able to post in the machine tool has been establishing. In this article, the on-machine tool measurement device applying dual wavelength is developed. We use the developed tool measurement device, installable size for machining center, to evaluate fundamental measurement performance.

DOI： 10.1299/jsmemecjo.2009.4.0_273

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007861922

Study on CMP Micro Patterned Pad Fabricated by MEMS Technology(2nd Report)

Takahashi Naoaki, Kimura Keiiti, Khajornrungruang Panart, Yasuda Keisuke, Baba Akiyoshi

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1027 - 1028 2009.01

H13 Study on observation methods for contact configuration between polishing pad and wafer under wet condition in CMP

Okamoto Eiichiro, Kimura Keiichi, Khajornrungruang Panart

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2009 ( 0 ) 247 - 248 2009.01

H12 Study on slurry flow in CMP process for large quadrilateral quartz glass substrate

Wada Nagisa, Kimura Keiichi, Khajomrungruang Panart

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2009 ( 0 ) 245 - 246 2009.01

H11 Polishing characteristic on Cu-CMP with Ultraviolet light irradiation

Sumomogi Nobutaka, Kimura Keiichi, Khajornrungruan Panart, Appalasamy Murari Rao

The Proceedings of Conference of Kyushu Branch ( The Japan Society of Mechanical Engineers ) 2009 ( 0 ) 243 - 244 2009.01

Mechanical property of copper complexing film and interaction between SiO<sub>2</sub> particle in slurry and the film

Imamura Akira, Kimura Keiichi, Panart Khajornrungruang, Hashiyama Yuichi, Hiyama Hirokuni, Mochizuki Yoshihiro

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1021 - 1022 2009.01

Study on Temperature Rise at Wafer and Polishing pad surfacein Chemical Mechanical Polishing (2nd report)

Ueno Kazuki, Kimura Keiichi, Khajornrungruang Panart, Koi Yuto

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2009 ( 0 ) 1041 - 1042 2009.01

Cu-CMP with Ultraviolet Light Irradiation in Deionized Water Reviewed

Panart Khajornrungruang,Keiichi Kimura and Nobutaka Sumomogi

2008 International Conference on Planarization/CMP Technology (ICPT 2008) 120 - 124 2008.11

ヨーロッパ精密工学会第10回記念国際会議(euspen 2008)報告 Invited Reviewed

パナートカチョーンルンルアン

精密工学会誌 = Journal of the Japan Society of Precision Engineering ( 公益社団法人精密工学会 ) 74 ( 8 ) 2008.08

ヨーロッパ精密工学会第10回記念国際会議(euspen 2008)報告

パナートカチョーンルンルアン

精密工学会誌 ( 三美印刷株式会社 ) 78 ( 8 ) 810 2008.08

On-machine Tool Measurement of Tool Tip Position using Laser Diffraction Reviewed

Panart Khajornrungruang,Keiichi Kimura

International Conference of European Society for Precision Engineering and Nanotechnology (euspen2008) 2008.05

Study on material removal model in oxide CMP process

Hashiyama Yuuichi, Kimura Keiichi, Khajornrungruang Panart

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 851 - 852 2008.01

Language：Japanese Publishing type：Research paper (other academic)

This study is focused on the material removal mechanism in chemical mechanical polishing (CMP) process. The material removal phenomena in CMP process has not been clarified yet. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed with AFM and material removal mechanism was investigated. Especially in this paper, we researched about the interaction between the oxide wafer surface and fine particles. The property of SiO2 film in solution and adhesive removal phenomena with a fine particle were investigated with AFM indentation. We propose novel materials removal model based on these experiments.

DOI： 10.11522/pscjspe.2008A.0.851.0

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/130004658870

Ultraviolet Light Irradiation Polishing for Cu-CMP (1st report):Ultraviolet Light Effect in Deionized Water

Khajornrungruang Panart, Kimura Keiichi, Sumomogi Nobutaka, Mori Chikara

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 835 - 836 2008.01

A study on film formation at Cu wafer surface in chemical solution

Imamura Akira, Kimura Keiichi, Khajornrungruang Panart, Hashiyama Yuichi, Sumiyoshi Hirohumi, Hiyama Hirokuni, Mochizuki Yoshihiro

Proceedings of JSPE Semestrial Meeting ( The Japan Society for Precision Engineering ) 2008 ( 0 ) 201 - 202 2008.01

21415 A study on material removal model in CMP process : 2nd report-Investigation of material removal phenomenon using AFM

Hashiyama Yuuichi, Kimura Keiichi, Khajonrungruang Panart

The Proceedings of Conference of Kanto Branch ( The Japan Society of Mechanical Engineers ) 2008 ( 0 ) 409 - 410 2008.01

Language：Japanese Publishing type：Research paper (other academic)

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. At first, the property of SiO_2 film in solution was investigated with AFM indentation. Next, the AFM tip after indentation was observed with SEM-EDX system. In pH7〜pH 10 solution, SiO_2 film changed to soft material, and small adherent which was SiO_2 was observed in pH7 solution. This fact suggests that fine particles in slurry adhere materials from SiO_2 film with chemical adherent force.

DOI： 10.1299/jsmekanto.2008.14.409

CiNii Article

Other Link： https://ci.nii.ac.jp/naid/110007705394

On-machine tool measurement of tool tip position using laser diffraction Reviewed

Khajornrungruang P., Kimura K.

Proceedings of the 10th Anniversary International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2008 2 362 - 365 2008.01

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Papers - KHAJORNRUNGRUANG, Panart